The process of annealing of a CdTe:Cl ingot during its cooling after growth was studied. The annealing was performed in two stages: a high-temperature stage, with an approximate equality of chlorine and cadmium vacancy concentrations established at the thermodynamic equilibrium between the crystal and vapors of volatile components, and a low-temperature stage, with charged defects interacting to form neutral associations. The chlorine concentrations necessary to obtain semi-insulating crystals were determined for various ingot cooling rates in the high temperature stage. The dependence of the chlorine concentration [Cl+Te] in the ingot on the temperature of annealing in the high-temperature stage was found. The carrier lifetimes and drift mobilities were obtained in relation to the temperature and cadmium vapor pressure in the postgrowth annealing of the ingot.

Cd Te：CL钢锭生长后冷却过程中的退火过程 对其进行了研究。退火分两个阶段进行：高温 阶段，氯和镉的空位大致相等 在晶体之间的热力学平衡点建立的浓度 和挥发性成分的蒸气，以及带电的低温阶段 缺陷相互作用，形成中性联想。氯气浓度 确定了获得半绝缘晶体所需的各种钢锭 高温阶段的冷却速度。对氯的依赖 钢锭中[Cl+Te]浓度对退火温度的影响 发现了高温阶段。载流子寿命和漂移迁移率 得到了与温度和镉蒸汽压有关的 钢锭生长后的退火热处理。